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SUD50N04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
Limited b y R DS(on) *
100 μs
100
10
Limited by R DS(on) *
100 μ s
1 ms
1
1 ms
10 ms
1
10 ms
100 ms
1s
100 ms
10 s
T C = 25 °C
Single P u lse
0.1
0.01
T A = 25 °C
Single P u lse
DC
0.1
0.01
0.01
0.1 1 10
100
0.01
0.1
1
10
100
11
9
7
4
2
0
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
32
26
19
13
6
0
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Case
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T A - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
T C - Case Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation P D is based on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
www.vishay.com
5
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